Samsung Demonstrates 256 Gb 3 nm MBCFET Chip at ISSCC 2021

Samsung Demonstrates 256 Gb 3 nm MBCFET Chip at ISSCC 2021

During the IEEE International Solid-State Circuits Conference (ISSCC), Samsung Foundry has presented a new step towards smaller and more efficient nodes. The new chip that was presented is a 256 Gb memory chip, based on SRAM technology. However, all of that doesn’t sound interesting, until we mention the technology that...

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